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this is information on a product in full production. february 2013 doc id 024223 rev 1 1/15 15 STF20N65M5, stfi20n65m5 n-channel 650 v, 0.160 typ., 18 a mdmesh? v power mosfet in to-220fp and i 2 pakfp packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v ds @ t jmax r ds(on) max i d STF20N65M5 710 v 0.19 18 a stfi20n65m5 to-220fp i 2 pakfp 1 2 3 1 2 3 (to-281) !-v $ ' 3 table 1. device summary order codes marking package packaging STF20N65M5 20n65m5 to-220fp tu b e stfi20n65m5 i 2 pakfp (to-281) www.st.com
contents STF20N65M5, stfi20n65m5 2/15 doc id 024223 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STF20N65M5, stfi20n65m5 electrical ratings doc id 024223 rev 1 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 18 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 11.3 (1) a i dm (1) drain current (pulsed) 72 (1) a p tot total dissipation at t c = 25 c 30 w dv/dt (2) 2. i sd 18 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 4.17 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50 v) 270 mj
electrical characteristics STF20N65M5, stfi20n65m5 4/15 doc id 024223 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9 a 0.160 0.19 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1434 38 3.7 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 - 118 - pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -35-pf r g intrinsic gate resistance f = 1 mhz open drain - 3.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 9 a, v gs = 10 v (see figure 16 ) - 36 7.5 18 - nc nc nc
STF20N65M5, stfi20n65m5 electrical characteristics doc id 024223 rev 1 5/15 table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 12 a, r g = 4.7 , v gs = 10 v (see figure 17 and figure 20 ) - 43 7.5 7.5 11.5 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 18 72 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 18 a, di/dt = 100 a/s v dd = 100 v (see figure 20 ) - 288 4 27 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 18 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 20 ) - 342 4.7 28 ns c a
electrical characteristics STF20N65M5, stfi20n65m5 6/15 doc id 024223 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am155 8 4v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 20 25 v g s = 6 v v g s = 7 v v g s = 8 v v g s = 9, 10 v 25 3 0 3 5 40 am155 8 7v1 i d 15 10 5 0 3 5 v g s (v) 7 (a) 4 6 8 20 25 9 v d s = 25 v 3 0 3 5 40 am155 88 v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =520v i d =9a 3 00 200 100 0 400 500 v d s (v) v d s 12 am155 8 9v1 r d s (on) 0.155 0.145 0.1 3 5 0.125 0 10 i d (a) ( ) 5 15 0.165 0.175 v g s =10v 0.1 8 5 0.195 am15590v1
STF20N65M5, stfi20n65m5 electrical characteristics doc id 024223 rev 1 7/15 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized b vdss vs temperature figure 13. drain-source diode forward characteristics c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am15591v1 e o ss 2 1 0 0 100 v d s (v) ( j) 400 3 200 3 00 4 5 500 600 6 7 am15592v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am05459v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s = 10v i d = 9 a am05460v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1
electrical characteristics STF20N65M5, stfi20n65m5 8/15 doc id 024223 rev 1 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode e 0 0 20 r g ( ) ( j) 10 3 0 50 100 40 i d =12a v dd =400v eon eoff 150 v g s =10v 200 250 am1559 3 v1
STF20N65M5, stfi20n65m5 test circuits doc id 024223 rev 1 9/15 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
package mechanical data STF20N65M5, stfi20n65m5 10/15 doc id 024223 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STF20N65M5, stfi20n65m5 package mechanical data doc id 024223 rev 1 11/15 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data STF20N65M5, stfi20n65m5 12/15 doc id 024223 rev 1 figure 21. to-220fp drawing 7012510_rev_k_b
STF20N65M5, stfi20n65m5 package mechanical data doc id 024223 rev 1 13/15 figure 22. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
revision history STF20N65M5, stfi20n65m5 14/15 doc id 024223 rev 1 5 revision history table 11. document revision history date revision changes 01-feb-2013 1 first release. part numbers previously included in datasheet dm00049308
STF20N65M5, stfi20n65m5 doc id 024223 rev 1 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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